atk:半导体材料与器件
差别
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| atk:半导体材料与器件 [2018/09/06 12:12] – 创建 fermi | atk:半导体材料与器件 [2019/11/05 08:47] (当前版本) – 移除 dong.dong |
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| ====== 半导体材料与器件 ====== | |
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| ^ 中文标题/链接 ^ 中文状态 ^ 英文链接 ^ | |
| | [[atk:计算晶体能带]] | 完成 | [[http://docs.quantumwise.com/tutorials/crystal_bandstructure.html|英文]] | | |
| | **[[硅材料中载流子有效质量]]** | 完成 | [[http://docs.quantumwise.com/tutorials/effective_mass.html|英文]] | | |
| | **[[迁移率]]** | 完成 | [[http://docs.quantumwise.com/tutorials/mobility.html|英文]] | | |
| | **[[硅的声子能带]]** | 完成 | [[http://docs.quantumwise.com/tutorials/phonon_bs.html|英文]] | | |
| | **[[硅的光学性质]]** | 完成 | [[http://docs.quantumwise.com/tutorials/optical.html|英文]] | | |
| | 电极化 | | [[http://docs.quantumwise.com/tutorials/polarization.html|英文]] | | |
| | 单轴、双轴应力下的硅 | | [[https://docs.quantumwise.com/tutorials/uniaxial_biaxial_stress/uniaxial_biaxial_stress.html|英文]] | | |
| | [[半导体能带中的自旋轨道耦合劈裂]] | 翻译中 | [[http://docs.quantumwise.com/tutorials/spin_orbit_bandstructures.html|英文]] | | |
| | [[InGaAs随机合金的有效能带结构]] | 正在上传(X) | [[http://docs.quantumwise.com/tutorials/effective_band_structure.html|英文]] | | |
| | Si(100)表面的复数能带 | <color #ffaec9>待上传(L)</color> | [[http://docs.quantumwise.com/tutorials/complex_bandstructure.html|英文]] | | |
| | [[拓扑绝缘体]] | 翻译中 | [[http://docs.quantumwise.com/tutorials/topological_insulator_bi2se3.html|英文]] | | |
| | **[[Ag-Si界面的肖特基势垒和电输运性质]]** | 完成 | [[https://docs.quantumwise.com/casestudies/ag_si_interface/ag_si_interface.html|英文]] | | |
| | **[[atk:硅p-n结]]** | 完成 | [[http://docs.quantumwise.com/tutorials/silicon_pn_junction.html|英文]] | | |
| | [[atk:Meta-GGA和二维受限的砷化铟]] | | [[https://docs.quantumwise.com/tutorials/inas_2d_mgga/inas_2d_mgga.html|英文]] | | |
| | [[InAs p-i-n 结]] | | [[http://docs.quantumwise.com/tutorials/inas_p-i-n_junction/inas_p-i-n_junction.html|英文]] | | |
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atk/半导体材料与器件.1536207136.txt.gz · 最后更改: 2018/09/06 12:12 由 fermi
