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atk:使用vnl-atk发表的文章列表 [2015/06/02 21:21] – fermi | atk:使用vnl-atk发表的文章列表 [2019/01/28 16:24] – dong.dong | ||
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+ | ====== 使用 QuantumATK 发表的文章概述 ====== | ||
- | ====== 使用VNL-ATK发表的文章列表 ====== | + | ====== |
- | ===== 2015年 | + | |
+ | QuantumATK 在全世界范围里有几百家单位构成的活跃用户群体,其中包括绝大部分全球知名的半导体和微电子公司,以及众多的大学、研究所等学术研究机构。 | ||
+ | |||
+ | ===== QuantumATK在中国 ===== | ||
+ | |||
+ | QuantumATK在中国广受欢迎,用户单位包括北京大学、清华大学、复旦大学、南京大学、浙江大学、中国科技大学、中国科学院大学、西安交通大学、哈尔滨工业大学、吉林大学、武汉大学、山东大学、厦门大学、华中科技大学、湖南大学、中南大学、兰州大学、中山大学、华南理工大学、太原理工大学、郑州大学和苏州大学等知名大学,中国科学院下属的物理所、半导体所、力学研究所、化学所、金属所、宁波材料所、福建物质结构所等多家知名科研院所等,总计80余家单位中的100余个研究组。 | ||
+ | |||
+ | ===== QuantumATK发表文章统计 ===== | ||
+ | |||
+ | QuantumATK 自发布以来,在学术界获得了广泛的声誉。尤其在电子器件的原子级别模拟领域一直是普遍认可的行业标准。自 2002 年以来,使用 | ||
+ | |||
+ | ===== 谷歌学术上的统计结果 ===== | ||
+ | |||
+ | 统计结果表面:(1)ATK全球用户数和活跃度增长明显;(2)传统器件体系的电子输运模拟占据绝对优势(约2400条);(3)新的应用领域(如材料调控与改性、表面吸附、材料界面、光催化、磁性材料、材料分子动力学、材料力学性质)等新领域均有文章发表。 | ||
+ | |||
+ | |||
+ | 使用QuantumATK(含老版本的VNL-ATK)软件在知名期刊上发表论文情况统计表(文章数截至2018年6月,Google Scholar统计) | ||
+ | |||
+ | ^ 杂志名 ^ 论文数 ^ 杂志影响因子 ^ | ||
+ | | Nature Materials | 1 | 38.891 | | ||
+ | | Nature Nanotechnology | 1 | 34.048 | | ||
+ | | Advanced Materials | 6 | 18.96 | | ||
+ | | Nature Physics | 1 | 18.791 | | ||
+ | | Nano Letters | ||
+ | | ACS Nano | 13 | 13.334 | | ||
+ | | Journal of the American Chemical Society | 15 | 13.038 | | ||
+ | | Angewandte Chemie International Edition | 2 | 11.709 | | ||
+ | | Advanced Funtional Materials | ||
+ | | Nature Communication | 1 | 11.329 | | ||
+ | | Chemistry of Materials | 3 | 9.407 | | ||
+ | | Chemical Science | 3 | 9.144 | | ||
+ | | The Journal of Physical Chemistry Letters | 7 | 8.539 | | ||
+ | | Small | 3 | 8.315 | | ||
+ | | Nanoscale | 38 | 7.76 | | ||
+ | | Physical Review Letters | 13 | 7.645 | | ||
+ | | Carbon | 40 | 6.198 | | ||
+ | | Scientific Reports | 37 | 5.228 | | ||
+ | | Journal of Physical Chemistry C | 103 | 4.509 | | ||
+ | | Physical Chemistry Chemical Physics | 73 | 4.449 | | ||
+ | | Physical Review B | 74 | 3.718 | | ||
+ | | RSC Advances | 46 | 3.289 | | ||
+ | | Applied Physics Letter | 79 | 3.142 | | ||
+ | | Journal of Chemical Physics | 47 | 2.894 | | ||
+ | |||
+ | 说明 | ||
+ | 使用QuantumATK发表的论文列表详见【官方链接】; | ||
+ | 2016年新发表的文章详细列表参见【费米维基】; | ||
+ | 最新的研究动态请检索Web of science 或 Google scholar; | ||
+ | 作为比较,另外某器件电子输运模拟的商业软件给出约 192篇文章,其中多数为开发相关人员发表(Google Scholar ,2018年6月查询)。 | ||
+ | |||
+ | |||
+ | |||
+ | ====== | ||
+ | <WRAP center info 80%> | ||
+ | ==== 更多文章列表参见Synopsys QuantumWise官方网站 ==== | ||
+ | [[http:// | ||
+ | </ | ||
- | ^ 作者 | ||
- | | Y. Min, J. H. Fang, C. G. Zhong, Z. C. Dong, J. F. Li, K. L. Yao, L. P. Zhou | Contact transparency inducing low bias negative differential resistance in two capped carbon nanotubes sandwiching σbarrier | ||
- | | Jain, Sumit Kumar; | ||
- | | Kaur, Milanpreet; | ||
- | | Khan, Mohammad Irfan; | ||
- | | Sweta Parashar, Pankaj Srivastava and Manisha Pattanaik | ||
- | | Yukihito Matsuura | ||
- | | Kwesi Eshun, Hao D. Xiong, Sheng Yu, Qiliang Li | Doping induces large variation in the electrical properties of MoS2 monolayers | ||
- | | F. Fuchs, A. Zienert, C. Wagner, J. Schuster, S.E. Schulz | ||
- | | Sheng Yu, Hao D. Xiong, Kwesi Eshun, Hui Yuan, Qiliang Li | Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain | ||
- | | S. Caliskan, S. Guner | The role of Co atoms in spin dependent electronic properties of graphite-like ZnO structures | ||
- | | Pankaj Srivastava, Subhra Dhar, Neeraj K. Jaiswal | ||
- | | S. Caliskan, F. Hazar | First principles study on the spin unrestricted electronic structure properties of transition metal doped InN nanoribbons | ||
- | | S. Caliskan, S. Guner | First principles study on the spin dependent electronic behavior of Co doped ZnO structures joining the Al electrodes | ||
- | | Jin-Kyu Choi, Hien Thu Pham, Hyun-Dam Jeong | A comparative study of electron transport in benzene molecule covalently bonded to gold and silicon electrodes for pioneering the electron transport properties of silicon quantum dot-molecule hybrid polymers | ||
- | | Wanzhi Qiu, Phuong Duc Nguyen, and Efstratios Skafidas | ||
- | | Sumeet C. Pandey, Roy Meade, and Gurtej S. Sandhu | ||
- | | Amretashis Sengupta, Anuja Chanana, and Santanu Mahapatra | ||
- | | Bahniman Ghosh and Aayush Gupta | Effect of defects on the electronic properties of WS2 armchair nanoribbon | ||
- | | Bahniman Ghosh, and Naval Kishor | ||
- | | Yukihito Matsuura | ||
- | | Bahniman Ghosh, Naval Kishor | ||
- | | Anurag Srivastava, Chetan Bhat, Sumit Kumar Jain, Pankaj Kumar Mishra, Ranjeet Brajpuriya | ||
- | | S. Barzilai, F. Tavazza, L. E. Levine | ||
- | | Hongmei Liu, Yuanyuan He, Jinjiang Zhang, Jianwei Zhao and Li Chen | A theoretical study of asymmetric electron transport through linearly aromatic molecules | ||
- | | Jie Ma, Chuan-Lu Yang, Mei-Shan Wang and Xiao-Guang Ma | Controlling the electronic transport properties of the tetrapyrimidinyl molecule with atom modified sulfur bridge | ||
- | | Jaroslav Vacek, Jana Vacek Chocholoušová, | ||
- | | Xiu Yan Liang, Guiling Zhang, Peng Sun, Yan Shang,a Zhao-Di Yang and Xiao Cheng Zeng | The electronic and transport properties of (VBz)n@CNT and (VBz)n@BNNT nanocables | ||
- | | Vusala Jafarova, Suma Huseynova, Guseyn Orudzhev, Naotaka Uchitomi, Kazuki Wakita, and Nazim Mamedov | ||
- | | Deblina Sarkar, Xuejun Xie, Jiahao Kang, Haojun Zhang, Wei Liu, Jose Navarrete, Martin Moskovits, and Kaustav Banerjee | ||
- | | Yangyang Wang, Zeyuan Ni, Qihang Liu, Ruge Quhe, Jiaxin Zheng, Meng Ye, Dapeng Yu, Junjie Shi, Jinbo Yang, Ju Li, and Jing Lu | All-Metallic Vertical Transistors Based on Stacked Dirac Materials |